 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MICROWAVE CORPORATION HMC135 V01.0300 GaAS MMIC BI-PHASE MODULATOR 1.8 - 5.2 GHz FEBRUARY 2001 Features General Description to phase-modulate an RF signal into reference and 180 degree states. Device input is at the RF port and output is at the LO port. The polarity of the bias current at the control port (IF port) defines the phase states. Excellent amplitude and phase balance provided by closely matched monolithic balun and diode circuits delivers 30 dB of carrier suppression in a tiny monolithic chip. The device also functions as a demodulator or phase comparator. As a demodulator, data emerges at the control port when a modulated signal at the RF port is compared to a reference signal at the LO port. As a phase comparator, the phase angle between two signals applied to the RF and LO ports is represented by an analog voltage at the control port. Except for carrier suppression, the data presented here was measured under static conditions in which a DC bias current (nominally 5 mA) is applied to the control port. Min. Typ. 1.8-5.2 9 2.5 3.0 0.2 2.5 25 0 5 15 2 30 8 10 30 5 10 0.5 5.0 11 Max. Units GHz dB dB dB deg dBc dBm dBm dBm mA CHIP INTEGRATES DIRECTLY INTO MIC DESIGNS The HMC135 Bi-Phase Modulator is designed 30 dB OF CARRIER SUPPRESSION DIRECT MODULATION IN THE 1.8-5.2 GHz BAND FUNCTIONS ALSO AS A PHASE DETECTOR 5 MODULATORS DIE Guaranteed Performance, For 5 mA Bias Current, -55 to +85 deg C Parameter Frequency Band Insertion Loss Return Loss, RF and LO Ports Amplitude Balance Phase Balance Carrier Suppression (When driven with a 1 MHz square wave, 1.4 Vp-p) Input Power for 1 dB Compression Third Order Intercept, Input Second Order Intercept, Input Bias Current (Bias current forward biases internal Schottky diodes providing approximately 0.6 V at the control port). 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 5-2 HMC135 MICROWAVE CORPORATION HMC135 V01.0300 BI-PHASE MODULATOR 1.8 - 5.2 GHz FEBRUARY 2001 Insertion Loss 0 Amplitude Balance 2 -5 INSERTION LOSS (dB) AMPLITUDE BALANCE (dB) 1 -10 0 -15 -1 -20 1 2 3 4 5 6 -2 1 2 3 4 5 6 FREQUENCY (GHz) FREQUENCY (GHz) Phase Balance 10 8 6 PHASE BALANCE (Deg) Carrier Suppression (For 1.4 Vp-p Square Wave Modulation at 1 MHz) 50 5 MODULATORS 6 CARRIER SUPPRESSION (dBc) 40 30 20 10 0 2 3 4 5 CARRIER FREQUENCY (GHz) 4 2 0 -2 -4 -6 -8 -10 1 2 3 4 5 6 FREQUENCY (GHz) Return Loss 0 RETURN LOSS (dB) -5 -10 -15 -20 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 5-3 DIE HMC135 MICROWAVE CORPORATION HMC135 FEBRUARY 2001 BI-PHASE MODULATOR 1.8 - 5.2 GHz V01.0300 Compression vs Frequency (For 5 mA Bias Current) 12 10 8 P1 dB Compression vs Bias at 4 GHz 14 12 10 P1 dB 8 6 4 2 0 6 4 2 5 MODULATORS 0 2 3 4 5 CARRIER FREQUENCY (GHz) 6 0 1 2 3 4 5 6 7 BIAS CURRENT (mA) 8 9 10 Third Order Intercept vs Frequency (For 5 mA Bias Current) 25 Third Order Intercept vs Bias at 4 GHz 25 20 IP3 (dBm) DIE IP3 (dBm) 20 15 10 5 0 2 3 4 5 CARRIER FREQUENCY (GHz) 6 15 10 5 0 0 1 2 3 4 5 6 7 BIAS CURRENT (mA) 8 9 10 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 5-4 HMC135 MICROWAVE CORPORATION HMC135 V01.0300 BI-PHASE MODULATOR 1.8 - 5.2 GHz FEBRUARY 2001 Schematic IN (RF) OUT (LO) Suggested TTL Driver for a Bi-Phase Modulator +5 Vdc +2.5 Vdc MODULATOR I, Q PORTS *R 1 IA .01 uF VCC VCC HCT04 TTL V Z = 2V GND HC04 VA 0.6V GND DC I/O (IF) 2.2K .01 uF HITTITE MODULATOR -2.5 Vdc NOTES 1) VA ALTERNATES BETWEEN 2.4 Vdc IA = 2.4 - 0.6 = 5 mA 360 2) HCT04 and HC04 are QMOS HEX INVERTERS. *R1 = 300 TO 620 2% SELECT R1 TO SUPPLY 3 TO 6 mA TO THE IF PORT 5 MODULATORS DIE Outline ( See DIE Handling, Mounting, Bonding Note Page 8 - 3 ) 1.453 (0.057) DC I/O 0.610 (IF) PORT (0.024) IF 1.015 1.453 (0.057) (0.040) IN (RF) PORT 0.277 (0.011) Hittite LO RF 0.227 (0.011) OUT (LO) PORT 0.127 (0.005) 1.195 (0.047) DIE THICKNESS IS 0.100 (0.004), BACKSIDE IS GROUND BOND PADS ARE 0.100 (0.004), SQUARE ALL DIMENSION ARE IN MILLIMETERS (INCHES) BOND PAD METALLIZATION : GOLD BACKSIDE METALLIZATION : GOLD ALL TOLERANCES ARE 0.025 (0.001) 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 5-5 |
Price & Availability of HMC135
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |